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Patent # Description
US-9,442,796 Memory controller supporting rate-compatible punctured codes
Apparatus and methods store data in a non-volatile solid state memory device according to a rate-compatible code, such as a rate-compatible convolutional code...
US-9,442,658 Apparatuses and methods including selectively providing a single or separate chip select signals
Apparatus and methods are disclosed herein, including those that operate to initialize registers of a first memory device and a second memory device of a...
US-9,442,160 Probe assembly and probe base plate
A probe assembly includes a wiring base plate arranged on a lower surface side of a reinforcing plate and a probe base plate arranged on a lower surface side of...
US-D766,188 Plunger housing body
US-D766,187 Plunger housing body
US-9,439,326 Electronic components
An electronic component may include an integrated circuit device package and a second substrate. The integrated circuit device package may include a first...
US-9,437,816 Phase change memory structures and methods
A method of forming a phase change material memory cell includes forming a number of memory structure regions, wherein the memory structure regions include a...
US-9,437,809 Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes...
US-9,437,762 Elevated pocket pixels, imaging devices and systems including the same and method of forming the same
An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including,...
US-9,437,608 Vertical memory cell string with dielectric in a portion of the body
Some embodiments include a memory cell string having a body having a channel extending therein and in contact with a source/drain, a select gate adjacent to the...
US-9,437,604 Methods and apparatuses having strings of memory cells including a metal source
Methods for forming a string of memory cells, an apparatus having a string of memory cells, and a system are disclosed. A method for forming the string of...
US-9,437,480 Methods of forming semiconductor structures including tight pitch contacts and lines
Methods of fabricating semiconductor structures incorporating tight pitch contacts aligned with active area features and of simultaneously fabricating...
US-9,437,442 Methods for polishing phase change materials
A slurry for polishing a phase change material, such as Ge--Sb--Te, or germanium-antimony-tellurium (GST), includes abrasive particles of sizes that minimize at...
US-9,437,316 Continuous adjusting of sensing voltages
The present disclosure includes apparatuses and methods for continuous adjusting of sensing voltages. A number of embodiments include continuously monitoring an...
US-9,437,304 Memory devices and programming memory arrays thereof
An embodiment of a method includes decreasing a difference of a voltage applied to a first select gate minus a voltage applied to a source while the first...
US-9,437,294 Resistance variable memory sensing
The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include programming a memory cell...
US-9,437,288 Dual mode clock and data scheme for memory programming
A Phase-Change Memory (PCM) includes a factory programming interface to receive data changing on both a positive transition and a negative transition of a dual...
US-9,437,287 Methods, devices and processes for multi-state phase change devices
Devices include multiple phase change materials connected in parallel between electrodes. Memory cells with multiple parallel phase change materials can be...
US-9,437,265 Semiconductor device having shallow trench isolation and gate groove
Semiconductor devices have a substrate including first and second regions of differing conductivity types and a shallow trench isolation isolation region that...
US-9,437,263 Apparatuses and methods for providing strobe signals to memories
Apparatuses and methods for providing strobe signals to memories are described herein. An example apparatus may include a plurality of memories and a memory...
US-9,437,256 Data shifting
The present disclosure includes apparatuses and methods related to data shifting. An example apparatus comprises a first memory cell coupled to a first sense...
US-9,437,254 Method of dynamically selecting memory cell capacity
A method is provided for using a multi-level cell memory device. The method includes writing first data to a first portion of a memory array using a first...
US-9,437,253 Memory devices having data lines included in top and bottom conductive lines
Some embodiments include apparatuses and methods having a first set of conductive lines, a second set of conductive lines, and memory cells located in different...
US-9,436,609 Block addressing for parallel memory arrays
Apparatus and methods provide associative mapping of the blocks of two or more memory arrays such that data, such as pages of data, from the good blocks of the...
US-9,436,402 Methods and apparatus for pattern matching
Methods and apparatus for pattern matching are disclosed. In at least one embodiment, pattern checking is accomplished by reading a page of memory, and...
US-9,435,854 Electrical contactor and contact method for the same
An electrical contactor has a contact portion that is pressed onto a terminal of an electronic device and is electrically connected. When the dimension of the...
US-9,433,789 Method, system and apparatus for remote neural modulation brain stimulation and feedback control
A method, system and apparatus is presented for a wireless neural modulation feedback control system as it relates to an implantable medical device comprised of...
US-D765,602 Electric contact
US-9,433,040 Light-emitting metal-oxide-semiconductor devices and associated systems, devices, and methods
Various embodiments of solid state transducer ("SST") devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor...
US-9,431,890 Apparatuses and methods for converting single input voltage regulators to dual input voltage regulators
Apparatuses and methods for providing output power are disclosed. In an example method, a control signal is received at an output stage. The control signal may...
US-9,431,606 Memory cells
Some embodiments include a memory cell having a pair of electrodes, and a plurality of switching levels between the electrodes. Each switching level has an ion...
US-9,431,605 Methods of forming semiconductor device structures
A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an...
US-9,431,493 Methods of forming charge-trapping regions
Some embodiments include methods of forming charge-trapping zones. The methods may include forming nanoparticles, transferring the nanoparticles to a liquid to...
US-9,431,459 Switching components and memory units
Some embodiments include a switching component which includes a selector region between a pair of electrodes. The selector region contains silicon doped with...
US-9,431,422 Semiconductor constructions and NAND unit cells
Some embodiments include methods of forming semiconductor constructions. Alternating layers of n-type doped material and p-type doped material may be formed....
US-9,431,421 Data line arrangement and pillar arrangement in apparatuses
Some embodiments include an apparatus having semiconductor pillars in a substantially hexagonally closest packed arrangement. The hexagonally closest packed...
US-9,431,410 Methods and apparatuses having memory cells including a monolithic semiconductor channel
Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of...
US-9,431,128 Semiconductor device including fuse circuit
Disclosed herein is an apparatus that includes a fuse circuit including a fuse element, the fuse circuit configured to provide a first output signal having a...
US-9,431,121 Read voltage adjustment
The present disclosure includes apparatuses and methods related to adjusting read voltages of charge-trapping flash memory. An example embodiment apparatus can...
US-9,431,102 Apparatus and method for reading a phase-change memory cell
An apparatus and a method of reading a phase-change memory cell are described. A circuit includes a current ramp circuit. A current forcing module is coupled to...
US-9,431,094 Input buffer
Apparatuses including a data input circuit of a semiconductor device are described. An example apparatus includes a first transistor that receives a reference...
US-9,430,735 Neural network in a memory device
Devices, systems and methods for operating a memory device facilitating a neural network in a memory device are disclosed. In at least one embodiment, the...
US-9,430,417 Sequential memory access operations
Methods of operating a memory include performing a memory access operation, obtaining an address corresponding to a subsequent memory access operation prior to...
US-9,430,385 Moveable locked lines in a multi-level cache
A processor includes a multi-level cache hierarchy where a lock property is associated with a cache line. The cache line retains the lock property and may move...
US-9,430,378 Differential delay compensation
In one embodiment, a method includes receiving a plurality of data frames representing at least one virtually concatenated data stream, storing the plurality of...
US-9,430,373 Apparatus including memory channel control circuit and related methods for relaying commands to logical units
Memory system controllers can include a switch and non-volatile memory control circuitry coupled to the switch. The non-volatile memory control circuitry can...
US-9,430,191 Division operations for memory
Examples of the present disclosure provide apparatuses and methods for performing division operations in a memory. An example apparatus comprises a first...
US-9,426,384 Method, apparatus, and system providing an imager with pixels having extended dynamic range
The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light...
US-9,425,390 Select device for memory cell applications
The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first...
US-9,425,190 Techniques for providing a direct injection semiconductor memory device
Techniques for providing a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as...
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