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Patent # Description
US-7,608,495 Transistor forming methods
A transistor forming method includes forming a dielectric spacer in a trench surrounding an active area island, forming line openings through the spacer, and...
US-7,608,196 Method of forming high aspect ratio apertures
A plasma etch process for etching a dielectric material employing two primary etchants at low flows and pressures, and a relatively low temperature environment...
US-7,608,195 High aspect ratio contacts
A process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by supplying a first gaseous etchant having at least fifty...
US-7,607,177 Secure compact flash
An embodiment of the present invention includes a nonvolatile memory card including a controller and nonvolatile memory coupled to the controller, the controller...
US-7,606,448 Zinc oxide diodes for optical interconnections
The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined...
US-7,606,102 Memory address repair without enable fuses
A memory chip design methodology is disclosed wherein fuse banks on the memory chip may be implemented without enable fuses. A fuse bank may be enabled by using...
US-7,606,101 Circuit and method for controlling a clock synchronizing circuit for low power refresh operation
A method and apparatus is provided for idling a clock synchronizing circuit during at least a portion of time during execution of a refresh operation in a memory...
US-7,606,097 Array sense amplifiers, memory devices and systems including same, and methods of operation
A sense amplifier having an amplifier stage with decreased gain is described. The sense amplifier includes a first input/output ("I/O") node and a second...
US-7,606,088 Sense amplifier circuit
The disclosed embodiments relate to an equalization circuit, which may include a first sense amplifier having an input, the input being electrically isolated...
US-7,606,075 Read operation for NAND memory
Non-volatile memory devices utilizing a NAND architecture are adapted to perform read operations where a first potential is supplied to source lines associated...
US-7,606,055 Memory architecture and cell design employing two access transistors
An improved memory array architecture and cell design is disclosed in which the cell employs two access transistors. In one embodiment, the two access...
US-7,605,934 Method and system for facsimile delivery using dial-up modem pools
A method and system for communicating a facsimile (fax) message over a computer network. A user initiates the sending of the fax to a recipient fax transceiver...
US-7,605,852 Real-time exposure control for automatic light control
An imager and a method for real-time, non-destructive monitoring of light incident on imager pixels during their exposure to light. Real-time or present pixel...
US-7,605,650 Switched capacitor amplifier with higher gain and improved closed-loop gain accuracy
A switched capacitor CMOS amplifier uses a first stage non-inverting CMOS amplifier driving a second stage inverting CMOS amplifier. The first stage amplifier is...
US-7,605,631 Delay line synchronizer apparatus and method
A synchronizer system and method that can be used with a conventional adjustable delay circuit to preserve a pseudo-synchronous phase relationship between clock...
US-7,605,620 System and method to improve the efficiency of synchronous mirror delays and delay locked loops
A phase detection system for use with a synchronous mirror delay or a delay-locked loop in order to reduce the number of delay stages required, and therefore...
US-7,605,611 Methods, devices, and systems for a high voltage tolerant buffer
Methods, devices, and systems are disclosed, including those for a buffer having pre-driver circuitry configured to provide voltages to thin-gate dielectric...
US-7,605,417 Assemblies comprising magnetic elements and magnetic barrier or shielding at least partially around the...
The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First...
US-7,605,350 System for two-step resist soft bake to prevent ILD outgassing during semiconductor processing
In general, the system provides for soft baking a semiconductor wafer so that photoresist layers on the wafer are free of surface voids or craters. In...
US-7,605,034 Integrated circuit memory cells and methods of forming
An integrated circuit memory cell includes a combined first capacitor electrode and first transistor source/drain, a second capacitor electrode, a capacitor...
US-7,605,033 Low resistance peripheral local interconnect contacts with selective wet strip of titanium
Methods for forming memory devices and integrated circuitry, for example, DRAM circuitry, structures and devices resulting from such methods, and systems that...
US-7,605,030 Hafnium tantalum oxynitride high-k dielectric and metal gates
Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum...
US-7,605,028 Method of forming a memory device having a storage transistor
A memory device and a method of forming the memory device. The memory device comprises a storage transistor at a surface of a substrate comprising a body portion...
US-7,604,729 Methods and apparatus for selectively removing conductive material from a microelectronic substrate
Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the...
US-7,604,527 Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a...
US-7,603,772 Methods of fabricating substrates including one or more conductive vias
Substrate precursor structures include a substrate blank having at least one aperture extending substantially through the substrate blank. At least a portion of...
US-7,603,534 Synchronous flash memory with status burst output
A synchronous flash memory includes an array of non-volatile memory cells. The memory array is arranged in rows and columns, and can be further arranged in...
US-7,603,493 Dynamically setting burst length of memory device by applying signal to at least one external pin during a read...
One or more external control pins and/or addressing pins on a memory device are used to set one or both of a burst length and burst type of the memory device.
US-7,602,876 Method and apparatus for generating a phase dependent control signal
A phase detector generates a phase dependent control signal according to the phase relationship between a first and second clock signal. The phase detector...
US-7,602,630 Configurable inputs and outputs for memory stacking system and method
Embodiments of the present invention relate to configurable inputs and/or outputs for memory and memory stacking applications. More specifically, embodiments of...
US-7,602,618 Methods and apparatuses for transferring heat from stacked microfeature devices
Apparatuses for transferring heat from stacked microfeature devices are disclosed herein. In one embodiment, a microfeature device assembly comprises a support...
US-7,602,200 Probe for electrical test comprising a positioning mark and probe assembly
A probe for electrical test provided with positioning marks parallel to a plane where tips are provided and at a height position lower than the plane on a plane...
US-7,602,049 Capacitive techniques to reduce noise in high speed interconnections
Improved methods and structures are provided using capacitive techniques to reduce noise in high speed interconnections, such as in CMOS integrated circuits....
US-7,602,039 Programmable capacitor associated with an input/output pad
The present invention provides a method and apparatus for a programmable capacitor associated with an input/output pad in the semiconductor device. The apparatus...
US-7,602,030 Hafnium tantalum oxide dielectrics
A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety...
US-7,602,009 Erasable non-volatile memory device using hole trapping in high-K dielectrics
A non-volatile memory is described having memory cells with a gate dielectric. The gate dielectric is a multilayer charge trapping dielectric between a control...
US-7,602,001 Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one...
This invention includes a capacitorless one transistor DRAM cell that includes a pair of spaced source/drain regions received within semiconductive material. An...
US-7,601,649 Zirconium-doped tantalum oxide films
A dielectric film containing zirconium-doped tantalum oxide arranged as a structure of one or more monolayers and a method of fabricating such a dielectric film...
US-7,601,608 Memory array buried digit line
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a...
US-7,601,598 Reverse metal process for creating a metal silicide transistor gate structure
The present invention teaches a method of forming a MOSFET transistor having a silicide gate which is not subject to problems produced by etching a metal...
US-7,601,595 Surround gate access transistors with grown ultra-thin bodies
A vertical transistor having an annular transistor body surrounding a vertical pillar, which can be made from oxide. The transistor body can be grown by a solid...
US-7,601,593 Flash memory with metal-insulator-metal tunneling program and erase
The flash memory cell comprises a sense transistor that has a pair of source/drain lines and a control gate. A coupling metal-insulator-metal capacitor is...
US-7,601,591 Method of manufacturing sidewall spacers on a memory device, and device comprising same
The present invention is generally directed to a method of manufacturing sidewall spacers on a memory device, and a memory device comprising such sidewall...
US-7,601,586 Methods of forming buried bit line DRAM circuitry
A method of forming buried bit line DRAM circuitry includes collectively forming a buried bit line forming trench, bit line vias extending from the bit line...
US-7,601,562 Microelectronic component assemblies having lead frames adapted to reduce package bow
The present disclosure suggests various microelectronic component assembly designs and methods for manufacturing microelectronic component assemblies. In one...
US-7,601,547 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
A method is provided for fabricating a fixed layer for a MRAM device. The method includes providing the fixed layer. The fixed layer includes an ...
US-7,601,283 Methods and apparatuses for shaping a printed circuit board
Methods and apparatuses for shaping a corner of a printed circuit board are disclosed. An apparatus in accordance with one embodiment includes a carrier...
US-7,600,314 Methods for installing a plurality of circuit devices
A technique is provided for installing circuit components, such as memory devices, in a support, such as a socket. The device to be installed is supported in a...
US-7,598,181 Process for enhancing solubility and reaction rates in supercritical fluids
Processes for enhancing solubility and the reaction rates in supercritical fluids are provided. In preferred embodiments, such processes provide for the uniform...
US-7,598,167 Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures
Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a...
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