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Patent # Description
US-7,271,053 Methods of forming capacitors and electronic devices
A method of forming a capacitor includes forming a first conductive capacitor electrode layer over a substrate. The first electrode layer has an outer surface...
US-7,271,052 Long retention time single transistor vertical memory gain cell
A single transistor vertical memory gain cell with long data retention times. The memory cell is formed from a silicon carbide substrate to take advantage of the...
US-7,271,051 Methods of forming a plurality of capacitor devices
The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention...
US-7,271,050 Silicon nanocrystal capacitor and process for forming same
A storage capacitor plate for a semiconductor assembly comprising a substantially continuous porous conductive storage plate comprising silicon nanocrystals...
US-7,271,037 Leadframe alteration to direct compound flow into package
A leadframe comprising a downset formed adjacent to an edge of the leadframe so as to direct the molding compound to flow evenly inside the mold cavity. The...
US-7,271,036 Leadframe alteration to direct compound flow into package
A leadframe comprising a downset formed adjacent to an edge of the leadframe so as to direct the molding compound to flow evenly inside the mold cavity. The...
US-7,271,027 Castellation wafer level packaging of integrated circuit chips
Systems and methods for packaging integrated circuit chips in castellation wafer level packaging are provided. The active circuit areas of the chips are coupled...
US-7,271,025 Image sensor with SOI substrate
An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and...
US-7,271,018 Method of forming a support frame for semiconductor packages
A semiconductor die package having an elastomeric substrate with a first support frame and a second support frame. The first support frame has a cavity within...
US-7,271,016 Methods and apparatus for a flexible circuit interposer
Methods and apparatus for testing a semiconductor device are disclosed. A flexible circuit interposer includes a flexible circuit substrate which allows in-situ...
US-7,270,917 Prevention of photoresist scumming
A photo acid generator (PAG) or an acid is used to reduce resist scumming and footing. Diffusion of acid from photoresist into neighbors causes a decreased acid...
US-7,270,715 Chemical vapor deposition apparatus
A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a...
US-7,270,596 Chemical mechanical polishing process
A chemical mechanical polishing process includes rotating at least one of a semiconductor substrate and polishing pad relative to the other. A chemical...
US-7,269,898 Method for making an edge intensive antifuse
An antifuse including a bottom plate having a plurality of longitudinal members arranged substantially parallel to a first axis, a dielectric layer formed on the...
US-7,269,765 Method and apparatus for storing failing part locations in a module
A non-volatile storage device on a memory module comprising a plurality of memory devices is used to store the locations of defective parts on the memory module,...
US-7,269,686 Synchronous memory open page register
A memory device includes memory cells arranged in multiple blocks. A register is provided to track multiple open pages per block of the memory. In one...
US-7,269,685 Apparatus and methods for storing data in a magnetic random access memory (MRAM)
An apparatus and methods store data in a magnetic random access memory (MRAM) in a fast and efficient manner. Embodiments advantageously decrease the number of...
US-7,269,094 Memory system and method for strobing data, command and address signals
A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the...
US-7,269,091 Word line driver circuitry and methods for using the same
Word line driver circuitry for selectively charging and discharging one or more word lines is provided. The driver circuitry uses a dual transistor topology,...
US-7,269,083 Using redundant memory for extra features
An access request for a first memory location of a memory device is received at the memory device. A second memory location is selected in response to the...
US-7,269,079 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
A resistive memory device requires a power supply having a reduced number of voltage taps and reduced power consumption. In accordance with one exemplary...
US-7,269,072 NROM memory cell, memory array, related devices and methods
An array of memory cells configured to store at least one bit per one F.sup.2 includes substantially vertical structures providing an electronic memory function...
US-7,269,071 NROM memory cell, memory array, related devices and methods
An array of memory cells configured to store at least one bit per one F.sup.2 includes substantially vertical structures providing an electronic memory function...
US-7,269,066 Programming memory devices
A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether...
US-7,269,044 Method and apparatus for accessing a memory array
A memory device including first and second memory elements is provided. The first and second memory elements each have first and second electrodes. The first...
US-7,269,042 Memory stacking system and method
A method of forming a stacked memory module from a plurality of memory devices is provided. Each of the plurality of memory devices is modified to include a...
US-7,269,040 Static content addressable memory cell
A static content addressable memory (CAM) cell. The CAM cell includes a latch having complementary data nodes capacitively coupled to ground, first and second...
US-7,268,949 Microlens array sheet and manufacturing method thereof
A microlens array sheet and a manufacturing method thereof. The microlens array sheet comprises: a transparent substrate; bases formed on the transparent...
US-7,268,869 In-situ spectrograph and method of measuring light wavelength characteristics for photolithography
An in-situ spectrograph having a spectrometer module positioned at a reticle plane or at a wafer plane of a photolithography projection system is disclosed. The...
US-7,268,614 Low supply voltage bias circuit, semiconductor device, wafer and system including same, and method of...
A bias generator and a method of generating a bias reference are disclosed. A reference transistor is connected in a diode configuration. An n-channel transistor...
US-7,268,603 Method and apparatus for reducing duty cycle distortion of an output signal
A method and apparatus for reducing the duty cycle distortion of a periodic signal in high speed devices. More specifically, there is provided a device having a...
US-7,268,574 Systems and methods for sensing obstructions associated with electrical testing of microfeature workpieces
Systems and methods for sensing obstructions associated with electrical testing of microfeature workpieces are disclosed. An apparatus in accordance with one...
US-7,268,531 Apparatus for improving stability and lock time for synchronous circuits
Delay-locked loops, signal locking methods and devices and system incorporating delay-locked loops are described. A delay-locked loop includes a forward delay...
US-7,268,482 Preventing junction leakage in field emission devices
An apparatus for stabilizing the threshold voltage in an active matrix field emission device is disclosed. The apparatus includes the formation of...
US-7,268,481 Field emission display with smooth aluminum film
This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In...
US-7,268,413 Bipolar transistors with low-resistance emitter contacts
Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately,...
US-7,268,402 Memory cell with trench-isolated transistor including first and second isolation trenches
An isolation trench in a semiconductor includes a first isolation trench portion having a first depth and having a first sidewall intersecting a surface of the...
US-7,268,388 One-transistor composite-gate memory
One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect...
US-7,268,384 Semiconductor substrate having first and second pairs of word lines
The invention includes methods of forming memory circuitry. In one implementation, a semiconductor substrate includes a pair of word lines having a bit node...
US-7,268,382 DRAM cells
The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second...
US-7,268,078 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants
A process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of...
US-7,268,072 Method and structure for reducing contact aspect ratios
An intermediate metal plug is used to raise the platform to which contact is to be made. In the illustrated process, a partial bit line plug is formed adjacent a...
US-7,268,067 Semiconductor integrated circuit package having electrically disconnected solder balls for mounting
Integrated circuit packages that connect solder balls between solder ball pads of a die and substrate pads of a printed circuit board (PCB). The solder balls are...
US-7,268,059 Methods for securing components of semiconductor device assemblies to each other with adhesive materials that...
A method for securing a semiconductor device component to another element is provided. An adhesive material includes a pressure-sensitive component and a curable...
US-7,268,057 Methods of filling openings with oxide, and methods of forming trenched isolation regions
The invention includes methods in which oxide is formed within openings in a three-step process. A first step is deposition of oxide under a pressure of greater...
US-7,268,054 Methods for increasing photo-alignment margins
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory...
US-7,268,039 Method of forming a contact using a sacrificial structure
A method of forming a double-sided capacitor using at least one sacrificial structure, such as a sacrificial liner or a sacrificial plug. A sacrificial liner is...
US-7,268,035 Methods of forming semiconductor constructions comprising cerium oxide and titanium oxide
The invention includes semiconductor constructions comprising dielectric materials which contain cerium oxide and titanium oxide. The dielectric materials can...
US-7,268,034 Methods of forming pluralities of capacitors, and integrated circuitry
A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes...
US-7,268,031 Memory device with high dielectric constant gate dielectrics and metal floating gates
A memory cell transistor includes a high dielectric constant tunnel insulator, a metal floating gate, and a high dielectric constant inter-gate insulator...
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