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High resolution printing technique
A pattern having exceptionally small features is printed on a partially fabricated integrated circuit during integrated circuit fabrication. The pattern is...
Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices....
Single check memory devices and methods
Memory devices and methods of operating memory devices are shown. Configurations described include circuits to perform a single check between programming pulses...
Adjusted read for partially programmed block
The present disclosure is related to an adjusted read for a partially programmed block. A number of methods can include receiving a read request including a...
Semiconductor device and write method
A semiconductor device includes a memory cell array including a plurality of first and second memory cells each comprising a variable resistance element that...
Diode/superionic conductor/polymer memory structure
A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second...
Apparatuses and methods for reducing cycle times in successive memory
Methods and apparatuses are disclosed including an apparatus that includes a controller circuit configured to access a first subarray of a memory and to access...
Apparatuses, circuits, and methods for biasing signal lines
Apparatuses, circuits, and methods are disclosed for biasing signal lines in a memory array. In one such example the memory array includes a signal line coupled...
Methods and systems for handling data received by a state machine engine
A data analysis system to analyze data. The data analysis system includes a data buffer configured to receive data to be analyzed. The data analysis system also...
Secure controller for block oriented storage
A storage controller includes a command pointer register. The command pointer register points to a chain of commands in memory, and also includes a security...
System and method for data read of a synchronous serial interface NAND
A method and system is disclosed for operating a NAND memory device. The NAND memory device is operated by transmitting serial peripheral interface signals from...
Stripe-based non-volatile multilevel memory operation
Stripe-based non-volatile multilevel memory operation can include writing a number of lower stripes including programming a number of lower pages of information...
Failure recovery memory devices and methods
Memory devices and methods are described that include serially chained memory devices. In one or more of the configurations shown, a serial chain of memory...
State change in systems having devices coupled in a chained configuration
The present disclosure includes methods, devices, and systems for state change in systems having devices coupled in a chained configuration. A number of...
Lens heating compensation in photolithography
Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a...
Active alignment of optical fiber to chip using liquid crystals
Devices and systems to perform optical alignment by using one or more liquid crystal layers to actively steer a light beam from an optical fiber to an optical...
Porous organosilicate layers, and vapor deposition systems and methods for
A vapor deposition system includes a deposition chamber having a substrate positioned therein. The system includes at least one vessel containing at least one...
Unsymmetrical ligand sources, reduced symmetry metal-containing compounds,
and systems and methods including same
The present invention provides metal-containing compounds that include at least one .beta.-diketiminate ligand, and methods of making and using the same. In...
Image sensor defect identification using blurring techniques
Embodiments described herein may operate to image a scene with an imaging system using an image blurring technique. An image sensor array (ISA) element may be...
Output slew rate control
This document discusses, among other things, output slew rate control. Methods and structures are described to provide slew rate control of an output driver...
Methods of forming a ferroelectric memory cell
A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation....
Charge storage apparatus and methods
Methods of forming multi-tiered semiconductor devices are described, along with apparatus and systems that include them. In one such method, an opening is...
Vertical MOSFET transistor, in particular operating as a selector in
nonvolatile memory devices
A vertical MOSFET transistor is formed in a body of semiconductor material having a surface. The transistor includes a buried conductive region of a first...
Capacitors and methods with praseodymium oxide insulators
Methods of forming and the resulting capacitors formed by these methods are shown. Monolayers that contain praseodymium are deposited onto a substrate and...
Three-dimensional memory cells and methods of making and using the memory cells are discussed generally herein. In one or more embodiments, a three-dimensional...
Semiconductor constructions and NAND unit cells
Some embodiments include methods of forming semiconductor constructions. Alternating layers of n-type doped material and p-type doped material may be formed....
Methods of forming memory arrays and semiconductor constructions
Some embodiments include methods of forming semiconductor constructions. A heavily-doped region is formed within a first semiconductor material, and a second...
Redistribution layers for microfeature workpieces, and associated systems
Redistribution layers for microfeature workpieces, and associated systems and methods are disclosed. One method for processing a microfeature workpiece system...
Engineered substrate assemblies with thermally opaque materials, and
associated systems, devices, and methods
Engineered substrates having thermally opaque materials for preventing transmission of radiative energy during epitaxial growth processes and for separating...
Apparatuses and methods for mapping memory addresses to redundant memory
Apparatuses and methods related to redundant memory and mapping memory addresses to redundant memory are disclosed. An example apparatus includes a plurality of...
Determining an age of data stored in memory
The present disclosure includes apparatuses and methods for determining an age of data stored in memory. A number of embodiments include determining a sensing...
Semiconductor device having roll call circuit
Disclosed herein is an apparatus that includes: a plurality of memory banks each including a plurality of memory cells; a plurality of redundant circuits each...
Memory programming methods and memory systems
Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to...
Apparatuses and methods for sensing fuse states
Apparatuses and methods for sensing fuse states are disclosed herein. An apparatus may include an array having a plurality of sense lines. A plurality of cells...
Drain select gate voltage management
Some embodiments include apparatus, systems, and methods that operate to apply a first value of a drain select gate voltage during a first portion of a...
Determining soft data for combinations of memory cells
The present disclosure includes apparatuses and methods for determining soft data for combinations of memory cells. A number of embodiments include an array of...
Data modulation for groups of memory cells
Methods, devices, and systems for data modulation for groups of memory cells. Data modulation for groups of memory cells can include modulating N units of data...
Method of storing data on a flash memory device
Methods and apparatus are disclosed, such as those involving a flash memory device. One such method includes storing data on memory cells on a memory block...
Apparatus and methods for forming a memory cell using charge monitoring
Apparatus and methods of forming a memory cell are described. In one such method, a forming charge applied to a memory cell, such as a Resistive RAM (RRAM)...
Verify or read pulse for phase change memory and switch
Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a...
Memory devices, memory device operational methods, and memory device
Memory devices, memory device operational methods, and memory device implementation methods are described. According to one arrangement, a memory device...
Memory device with network on chip methods, apparatus, and systems
Apparatus, method and systems are provided such as those that can include a processor module, an interface device disposed above or below the processor module,...
Determining soft data for fractional digit memory cells
Apparatuses and methods for determining soft data for fractional digit memory cells are provided. One example apparatus can include a controller to determine...
Non-systematic coded error correction
Methods are described that facilitate the detection and correction of data in memory systems or devices by encoding the data bits of a memory row or block in a...
Method and apparatus for field firmware updates in data storage systems
Data storage devices and methods for updating firmware are disclosed. For example, one such data storage device includes a device firmware and a controller,...
Methods of forming semiconductor device structures, and related
semiconductor device structures
A method of forming a semiconductor device structure comprises forming a template material over a substrate, the template material exhibiting preferential...
Methods, devices and processes for multi-state phase change devices
Devices include multiple phase change materials connected in parallel between electrodes. Memory cells with multiple parallel phase change materials can be...
Multi-bit ferroelectric memory device and methods of forming the same
Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can...
Transistors, semiconductor constructions, and methods of forming
Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically...
3-D memory arrays
A 3-D memory array comprises a plurality of elevationally extending strings of memory cells. An array of select devices is elevationally over and individually...