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Patent # Description
US-9,087,578 Configurable reference current generation for non volatile memory
This disclosure relates to generating a reference current for a memory device. In one aspect, a non-volatile memory device, such as a phase change memory...
US-9,087,570 Apparatuses and methods for controlling a clock signal provided to a clock tree
Apparatuses, sense circuits, and methods for controlling a clock signal to a clock tree is described. An example apparatus includes a consecutive write command...
US-9,087,025 Data encoding using spare channels in a memory system
Implementations of encoding techniques are disclosed. The encoding technique, such as a Data bus Inversion (DBI) technique, is implementable in a...
US-9,086,983 Apparatus and methods for providing data integrity
The present disclosure includes apparatus (e.g., computing systems, memory systems, controllers, etc.) and methods for providing data integrity. One or more...
US-9,084,360 Electronic device assemblies including conductive vias having two or more conductive elements
Electronic devices include a substrate with first and second pairs of conductive traces extending in or on the substrate. A first conductive interconnecting...
US-9,083,575 Devices having different effective series resistance states and methods for controlling such devices
Devices and methods are described, such as those including parallel paths coupled between a first power supply and a second power supply. The parallel paths...
US-9,083,358 Delay lock loop phase glitch error filter
A method and apparatus is provided for providing a phase glitch error filter for a delay lock loop. The device comprises a delay lock loop to provide an output...
US-9,082,969 Keyhole-free sloped heater for phase change memory
Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating...
US-9,082,966 Methods of forming semiconductor devices and structures with improved planarization, uniformity
Semiconductor devices and structures, such as phase change memory devices, include peripheral conductive pads coupled to peripheral conductive contacts in a...
US-9,082,956 Confined cell structures and methods of forming confined cell structures
Techniques for reducing damage in memory cells are provided. Memory cell structures are typically formed using dry etch and/or planarization processes which...
US-9,082,829 Methods for forming arrays of small, closely spaced features
Methods of forming arrays of small, densely spaced holes or pillars for use in integrated circuits are disclosed. Various pattern transfer and etching steps can...
US-9,082,783 Semiconductor device and fabrication method thereof
The semiconductor device fabrication method of the present invention includes: laminating a plurality of amorphous silicon films on a semiconductor substrate,...
US-9,082,772 Stair step formation using at least two masks
Apparatuses and methods for stair step formation using at least two masks, such as in a memory device, are provided. One example method can include forming a...
US-9,082,748 Devices, systems, and methods related to removing parasitic conduction in semiconductor devices
Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes...
US-9,082,721 Structures comprising masks comprising carbon
The critical dimension (CD) of features formed during the fabrication of a semiconductor device may be controlled through the use of a dry develop chemistry...
US-9,082,692 Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
Engineered substrates having epitaxial templates for forming epitaxial semiconductor materials and associated systems and methods are disclosed herein. In...
US-9,082,555 Structure comprising multiple capacitors and methods for forming the structure
Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second...
US-9,082,494 Memory cells having a common gate terminal
Arrays of memory cells having a common gate terminal and methods of operating and forming the same are described herein. As an example, an array of memory cells...
US-9,082,485 Apparatuses and methods including memory array and data line architecture
Some embodiments include apparatus and methods having memory cells located in different device levels of a device, at least a portion of a transistor located in...
US-9,082,477 Set pulse for phase change memory programming
A memory device and method for programming the memory device, including a method for a melting phase change memory cell by applying an electronic signal at a...
US-9,082,474 Method and apparatus for providing preloaded non-volatile memory content
An embodiment providing one or more improvements includes a memory loading system and method for at least managing testing of a memory unit using a memory test...
US-9,082,471 Power saving memory apparatus, systems, and methods
Some embodiments include a voltage generator to generate a voltage to apply to a line used to access a memory cell of a memory device in which the voltage is...
US-9,082,466 Apparatuses and methods for adjusting deactivation voltages
Apparatuses and methods for adjusting deactivation voltages are described herein. An example apparatus may include a voltage control circuit. The voltage...
US-9,081,718 Systems and methods for storing and recovering controller data in non-volatile memory devices
Systems and methods are disclosed for storing the firmware and other data of a flash memory controller, such as using a RAID configuration across multiple flash...
US-9,081,717 Memory quality monitor based compensation method and apparatus
In one embodiment, an encoder reads a set of data from memory cells to obtain retrieved data influenced by one or more distortion mechanisms as a result of...
US-9,081,674 Dual mapping between program states and data patterns
The present disclosure includes methods and apparatuses for dual mapping between program states and data patterns. One apparatus includes a memory and a...
US-9,081,042 Resistive memory element sensing using averaging
A system for determining the logic state of a resistive memory cell element, for example an MRAM resistive cell element. The system includes a controlled...
US-9,079,436 Printing apparatus with cutter mechanism
A movable BF guide is provided in a movable-blade receiving area into which a movable blade slides along a fixed blade while being pressed against the fixed...
US-9,077,305 Adaptive on die decoupling devices and methods
Semiconductor dies and methods are described, such as those including a first capacitive pathway having a first effective series resistance (ESR) and a second...
US-9,076,963 Phase change memory cells and methods of forming phase change memory cells
A phase change memory cell includes a first electrode having a cylindrical portion. A dielectric material having a cylindrical portion is longitudinally over...
US-9,076,888 Silicided recessed silicon
Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the...
US-9,076,867 Semiconductor device structures including strained transistor channels
The present invention includes methods for stressing transistor channels of semiconductor device structures. Such methods include the formation of so-called...
US-9,076,835 Vertically base-connected bipolar transistor
Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar...
US-9,076,824 Memory arrays with a memory cell adjacent to a smaller size of a pillar having a greater channel length than a...
The disclosure is related to memory arrays and methods. One such memory array has a substantially vertical pillar. A memory cell adjacent to the pillar where...
US-9,076,757 Methods of forming a plurality of capacitors
A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes, an elevationally inner insulative retaining material...
US-9,076,686 Field effect transistor constructions and memory arrays
A field effect transistor construction comprises two source/drain regions and a channel region there-between. The channel region comprises a transition metal...
US-9,076,680 Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an...
A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive....
US-9,076,662 Fin-JFET
Methods, devices, and systems integrating Fin-JFETs and Fin-MOSFETs are provided. One method embodiment includes forming at least on Fin-MOSFET on a substrate...
US-9,076,547 Level compensation in multilevel memory
Some embodiments include apparatuses and methods having a compensation unit to provide a compensation value based at least in part on a threshold voltage value...
US-9,076,543 Techniques for providing a direct injection semiconductor memory device
Techniques for providing a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as...
US-9,076,528 Apparatus including memory management control circuitry and related methods for allocation of a write block cluster
Memory system controllers can include non-volatile memory control circuitry including a plurality of channel control circuits. Each of the plurality of channel...
US-9,076,524 Method of accessing a memory device
A method is provided for accessing a memory device. The method includes programming data in a plurality of cells of the memory device in a first programming...
US-9,076,501 Apparatuses and methods for reducing current leakage in a memory
Apparatuses, sense amplifier circuits, and methods for operating a sense amplifier circuit in a memory are described. An example apparatus includes a sense...
US-9,075,814 Memory device, electronic system, and methods associated with modifying data and a file of a memory device
A memory device, system and method of editing a file in a non-volatile memory device is described. The memory device includes a controller and a memory array...
US-9,075,770 Apparatuses and methods for memory testing and repair
Some embodiments include apparatuses and methods having a first interface to communicate with a processing unit, a second interface to communicate with a memory...
US-9,075,765 State change in systems having devices coupled in a chained configuration
The present disclosure includes methods, devices, and systems for state change in systems having devices coupled in a chained configuration. A number of...
US-9,075,725 Persistent memory for processor main memory
Subject matter disclosed herein relates to a system of one or more processors that includes persistent memory.
US-9,075,428 Results generation for state machine engines
A state machine engine includes a storage element, such as a (e.g., match) results memory. The storage element is configured to receive a result of an analysis...
US-9,075,317 Photomasks, methods of forming a photomask, and methods of photolithographically patterning a substrate
A photomask includes a substrate having a device region and an adjacent edge region over transparent material. The device region includes spaced primary...
US-9,075,083 Probe card
An electrode and wiring can be provided on an FPC board without restriction by a through hole. A probe card in which an FPC board of a probe assembly is fixed...
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