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Patent # Description
US-8,995,193 NAND memory constructions and methods of forming NAND memory constructions
Some embodiments include NAND memory constructions. The constructions may contain semiconductor material pillars extending upwardly between dielectric regions,...
US-8,995,188 Sharing support circuitry in a memory
A memory device, system, and method for operation of a memory device. In one such memory device, the memory device comprises a plurality of strings of memory...
US-8,995,182 Coarse and fine programming in a solid state memory
Memory devices adapted to receive and transmit analog data signals representative of bit patterns of two or more bits facilitate increases in data transfer...
US-8,995,161 Apparatus and methods to perform read-while write (RWW) operations
Subject matter disclosed herein relates to methods and apparatus, such as memory devices and systems including such memory devices. In one apparatus example, a...
US-8,994,489 Fuses, and methods of forming and using fuses
Some embodiments include a fuse having a tungsten-containing structure directly contacting an electrically conductive structure. The electrically conductive...
US-8,994,403 Apparatus and method for signal transmission over a channel
Apparatus and methods related to data transmission are disclosed. One such apparatus includes a transmitter, a receiver, and a channel. The transmitter includes...
US-8,994,189 Semiconductor structures including tight pitch contacts
Methods of fabricating semiconductor structures incorporating tight pitch contacts aligned with active area features and of simultaneously fabricating...
US-8,994,163 Semiconductor assemblies, stacked semiconductor devices, and methods of manufacturing semiconductor assemblies...
Stacked semiconductor devices, semiconductor assemblies, methods of manufacturing stacked semiconductor devices, and methods of manufacturing semiconductor...
US-8,994,150 Systems and methods for lowering interconnect capacitance
Methods and apparatus for lowering the capacitance of an interconnect, are disclosed. An example apparatus may include an interconnect formed in at least one...
US-8,993,455 ZrAlON films
Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices....
US-8,993,448 Methods of manufacturing semiconductor structures and devices including nanotubes, and semiconductor...
A method of forming a plurality of nanotubes is disclosed. Particularly, a substrate may be provided and a plurality of recesses may be formed therein. Further,...
US-8,993,374 Phase change material gradient structures and methods
Memory cells and memory cell structures having a number of phase change material gradients, devices utilizing the same, and methods of forming the same are...
US-8,993,088 Polymeric materials in self-assembled arrays and semiconductor structures comprising polymeric materials
Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from...
US-8,993,044 Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal...
US-8,990,647 Memory devices and methods for managing error regions
Memory devices and methods include a stack of memory dies and a logic die. Method and devices include those that provide for repartitioning the stack of memory...
US-8,990,644 Apparatus and methods of programming memory cells using adjustable charge state level(s)
Apparatus and methods are disclosed, including a method of programming involving determining an error rate for the memory cells, and programming the memory...
US-8,990,508 Memory prefetch systems and methods
Systems and methods are disclosed herein, including those that operate to prefetch a programmable number of data words from a selected memory vault in a...
US-8,990,476 Power interrupt management
The present disclosure includes methods for operating a memory system, and memory systems. One such method includes updating transaction log information in a...
US-8,989,692 High speed, wide frequency-range, digital phase mixer and methods of operation
The present disclosure is directed to a unit phase mixer in combination with an input buffer. The unit phase mixer has a pull-up path for pulling an output...
US-8,988,966 Circuit, system and method for controlling read latency
A read latency control circuit is described having a clock synchronization circuit and a read latency control circuit. The clock synchronization circuit...
US-8,988,955 Apparatuses and methods for compensating for power supply sensitivities of a circuit in a clock path
Apparatuses and methods for compensating for differing power supply sensitivities of a circuit in a clock path. One such method includes altering signal timing...
US-8,988,953 Memories and methods for sharing a signal node for the receipt and provision of non-data signals
Memories and methods for providing and receiving non-data signals at a signal node are disclosed. One such memory includes first and second signal nodes, and...
US-8,988,931 Permutational memory cells
Various embodiments comprise apparatuses having at least two resistance change memory (RCM) cells. In one embodiment, an apparatus includes at least two...
US-8,988,926 Method, system and device for phase change memory with shunt
Embodiments disclosed herein may relate to forming a storage component comprising a phase change material and a shunt relative to amorphous portions of the...
US-8,988,924 Method, system, and device for heating a phase change memory (PCM)cell
Embodiments disclosed herein may relate to heating a phase change memory (PCM) cell.
US-8,988,568 Biasing scheme for large format CMOS active pixel sensors
An image sensor includes circuitry compensating for voltage drops in a V.sub.SS line. The image sensor includes a plurality of photoreceptors arranged in a...
US-8,988,200 Printed label-to-RFID tag data translation apparatus and method
An apparatus and a method for translating, transcribing, and/or converting a printed label on a surface of an RFID tag into electronic data, which are writable...
US-8,987,906 Method for providing electrical connections to spaced conductive lines
An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an...
US-8,987,885 Packaged microdevices and methods for manufacturing packaged microdevices
Microdevices and methods for packaging microdevices. One embodiment of a packaged microdevice includes a substrate having a mounting area, contacts in the...
US-8,987,874 Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces
Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces are disclosed. In one embodiment, a microelectronic...
US-8,987,863 Electrical components for microelectronic devices and methods of forming the same
Electrical components for microelectronic devices and methods for forming electrical components. One particular embodiment of such a method comprises depositing...
US-8,987,834 Methods of providing electrical isolation and semiconductor structures including same
Methods of isolating gates in a semiconductor structure. In one embodiment, isolation is achieved using a spacer material in combination with fins. In another...
US-8,987,806 Fortification of charge storing material in high K dielectric environments and resulting apparatuses
Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel...
US-8,987,801 Memory cells having a plurality of control gates and memory cells having a control gate and a shield
Various embodiments comprise apparatuses having a number of memory cells. In one such apparatus, each cell has a plurality of control gates. For example, each...
US-8,987,702 Selectively conducting devices, diode constructions, constructions, and diode forming methods
Some embodiments include selectively conducting devices having a first electrode, a second electrode, and dielectric material between the first and second...
US-8,987,698 Memory constructions
Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include...
US-8,987,108 Methods of forming semiconductor structures including bodies of semiconductor material
Semiconductor structures that include bodies of a semiconductor material spaced apart from an underlying substrate. The bodies may be physically separated from...
US-8,987,045 Methods of forming a memory device
Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The...
US-8,984,370 Secondary memory to store error correction information
A system and method are disclosed in which a first non-volatile memory includes blocks that store data, and a second memory that stores error correction...
US-8,984,369 Shaping codes for memory
Apparatuses and methods associated with shaping codes for memory are provided. One example apparatus comprises an array of memory cells and a shaping component...
US-8,984,320 Command paths, apparatuses and methods for providing a command to a data block
Command paths, apparatuses, and methods for providing a command to a data block are described. In an example command path, a command receiver is configured to...
US-8,984,253 Transaction log recovery
The present disclosure includes methods for transaction log recovery in memory. One such method includes examining a number of entries saved in a transaction...
US-8,984,214 Memory cell operation
The present disclosure includes memory devices and systems having memory cells, as well as methods for operating the memory cells. One or more methods for...
US-8,982,633 Techniques for providing a direct injection semiconductor memory device
Techniques for providing a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as...
US-8,982,631 Programming methods and memories
Memory devices and programming methods for memories are disclosed, such as those adapted to program a memory using an increasing channel voltage for a first...
US-8,982,627 Fast programming memory device
In an embodiment of a memory device including a matrix of memory cells wherein the memory cells are arranged in a plurality of memory cells strings each one...
US-8,982,625 Memory program disturb reduction
Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method can include applying, during a first...
US-8,982,469 Lens master devices, lens structures, imaging devices, and methods and apparatuses of making the same
A method and apparatus providing a lens master device and use of the same to form a lens template and/or a lens structure. The method includes obtaining a...
US-8,981,463 Memory cell array with semiconductor selection device for multiple memory cells
A memory array that includes access devices that are each electrically coupled to more than one memory cell. The memory cells are coupled to the access devices...
US-8,981,336 Phase change memory cell with self-aligned vertical heater and low resistivity interface
A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change...
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