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Patent # Description
US-8,981,334 Memory cells having regions containing one or both of carbon and boron
Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate...
US-8,980,756 Methods for device fabrication using pitch reduction
Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a...
US-8,980,752 Method of forming a plurality of spaced features
A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material...
US-8,980,699 Thyristor-based memory cells, devices and systems including the same and methods for forming the same
Semiconductor devices including a plurality of thyristor-based memory cells, each having a cell size of 4F.sup.2, and methods for forming the same are provided....
US-8,977,929 Rearranging write data to avoid hard errors
This disclosure relates to avoiding a hard error in memory during write time by shifting data to be programmed to memory to mask the hard error. In one...
US-8,977,822 Memory device and method having on-board processing logic for facilitating interface with multiple processors,...
A memory device includes an on-board processing system that facilitates the ability of the memory device to interface with a plurality of processors operating...
US-8,977,809 Sharing resources in multi-dice stacks
Apparatus, systems, and methods for configuring a plurality of stacked semiconductor dice with unique identifiers and identifying a die in the stack using the...
US-8,977,808 Mapping between program states and data patterns
The present disclosure includes methods and apparatuses for mapping between program states and data patterns. One method includes: programming a group of G...
US-8,976,621 Continuous page read for memory
Subject matter disclosed herein relates to techniques to read memory in a continuous fashion.
US-8,976,594 Memory read apparatus and methods
Apparatus and methods are disclosed, including a method that raises an electrical potential of a plurality of access lines to a raised electrical potential,...
US-8,976,582 Analog sensing of memory cells in a solid-state memory device
A memory device that includes a sample and hold circuit coupled to a bit line. The sample and hold circuit stores a target threshold voltage for a selected...
US-8,976,570 Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact
Embodiments disclosed herein may include depositing a storage component material over and/or in a trench in a dielectric material, including depositing the...
US-8,976,566 Electronic devices, memory devices and memory arrays
Some embodiments include electronic devices having two capacitors connected in series. The two capacitors share a common electrode. One of the capacitors...
US-8,975,908 Electrical test probe and probe assembly with improved probe tip
An embodiment disperses a force acting on a border portion between an extending portion and a pedestal portion or a reinforcing member to prevent breakage of a...
US-8,975,745 Packaged microelectronic devices recessed in support member cavities, and associated methods
Packaged microelectronic devices recessed in support member cavities, and associated methods, are disclosed. Method in accordance with one embodiment includes...
US-8,975,614 Wavelength converters for solid state lighting devices, and associated systems and methods
Wavelength converters for solid state lighting devices, and associated systems and methods. A system in accordance with a particular embodiment includes a solid...
US-8,975,603 Systems and methods for plasma doping microfeature workpieces
Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a...
US-8,975,148 Memory arrays and methods of forming memory cells
Some embodiments include methods of forming memory cells. A stack includes ovonic material over an electrically conductive region. The stack is patterned into...
US-8,974,678 Methods using block co-polymer self-assembly for sub-lithographic patterning
Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock...
US-8,974,655 Methods of planarization and electro-chemical mechanical polishing processes
A method of removing a material from a surface includes providing a substrate comprising a material having a surface, contacting the surface with a polishing...
US-8,972,632 Asymmetric chip-to-chip interconnect
Methods and apparatus to transfer data between a first device and a second device, is disclosed. An apparatus according to various embodiments may comprise a...
US-8,971,127 NAND flash memory programming
A method of charging a floating gate in a nonvolatile memory cell comprises bringing a substrate channel within the memory cell to a first voltage, bringing a...
US-8,971,126 Charge loss compensation methods and apparatus
Methods and apparatus for compensating for charge loss in memories include tracking a specific block of the main memory array and determining charge loss...
US-8,971,125 Erase operations with erase-verify voltages based on where in the erase operations an erase cycle occurs
Memory devices and methods of erasing the memory devices are disclosed. One such method includes performing an erase cycle of an erase operation on a plurality...
US-8,971,124 Apparatuses and methods for performing logical operations using sensing circuitry
The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an...
US-8,971,121 Method and devices for memory cell erasure with a programming monitor of reference cells
Embodiments of the present disclosure provide methods, devices, modules, and systems for operating memory cells. One method includes: performing an erase...
US-8,971,117 Apparatus and methods for applying a non-zero voltage differential across a memory cell not involved in an...
Apparatus and methods for applying a non-zero voltage differential across a memory cell not involved in an access operation can facilitate improved data...
US-8,971,112 Method of programming a multi-level memory device
Method of programming a multi-level memory cell may include transferring one or more values between an auxiliary latch of the multi-level memory cell and a most...
US-8,971,105 Methods and apparatuses for controlling memory write sequences
Subject matter disclosed herein relates to memory operations regarding changing an order of program bits to be programmed into a memory array.
US-8,971,104 Memory programming to reduce thermal disturb
A resistive memory array is programmed such that particular adjacent pairs of memory cells along a bit line having a back-to-back relationship are programmed...
US-8,971,086 Capacitorless DRAM on bulk silicon
A method of forming capacitorless DRAM over localized silicon-on-insulator comprises the following steps: A silicon substrate is provided, and an array of...
US-8,970,034 Semiconductor assemblies and structures
Semiconductor assemblies, structures, and methods of fabrication are disclosed. A coating is formed on an electrically conductive pillar. The coating, which may...
US-8,969,928 Transistors having a control gate and one or more conductive structures
Transistors having a dielectric over a semiconductor, a control gate over the dielectric at a particular level, and one or more conductive structures over the...
US-8,969,899 Method for forming a light conversion material
A method and system for manufacturing a light conversion structure for a light emitting diode (LED) is disclosed. The method includes forming a transparent,...
US-8,969,217 Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and...
Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The...
US-8,969,214 Methods of forming a pattern on a substrate
A method of forming a pattern on a substrate includes forming spaced first features derived from a first lithographic patterning step. Sidewall spacers are...
US-8,969,154 Methods for fabricating semiconductor device structures and arrays of vertical transistor devices
A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region...
US-8,966,409 Methods of forming a mask and methods of correcting intra-field variation across a mask design used in...
A method of forming a mask includes creating a difference map between a desired intra-field pattern that is to be formed on substrates and an intra-field...
US-8,966,352 Memory controller supporting rate-compatible punctured codes and supporting block codes
Apparatus and methods store data in a non-volatile solid state memory device according to a rate-compatible code, such as a rate-compatible convolutional code...
US-8,966,335 Method for performing error corrections of digital information codified as a symbol sequence
A method and system for making error corrections on digital information coded as symbol sequences, for example digital information stored in electronic memory...
US-8,966,231 Modifying commands
The present disclosure includes methods, devices, modules, and systems for modifying commands. One device embodiment includes a memory controller including a...
US-8,966,165 Translation layer in a solid state storage device
Solid state storage devices and methods for flash translation layers are disclosed. In one such translation layer, a sector indication is translated to a memory...
US-8,966,135 Methods of providing access to I/O devices
A method of providing one or more computing devices with access to a plurality of resources. The plurality of resources are provided by at least one physical...
US-8,964,496 Apparatuses and methods for performing compare operations using sensing circuitry
The present disclosure includes apparatuses and methods related to performing compare and/or report operations using sensing circuitry. An example method can...
US-8,964,494 memories and methods for repair in open digit memory architectures
A memory with extra digit lines in full size end arrays with an open digit architecture, which can use the extra digit lines to form repair cells. In one...
US-8,964,479 Techniques for sensing a semiconductor memory device
Techniques for sensing a semiconductor memory device are disclosed. In one embodiment, the techniques may be realized as a semiconductor memory device...
US-8,964,474 Architecture for 3-D NAND memory
Apparatuses are described that include stacked arrays of memory cell strings and their methods of operation. Apparatuses include architectures that reduce the...
US-8,964,465 Fractional bits in memory cells
Methods, devices, modules, and systems for programming memory cells can include storing charges corresponding to a data state that represents an integer number...
US-8,964,461 Techniques for providing a direct injection semiconductor memory device
Techniques for providing a direct injection semiconductor memory device are disclosed. In one embodiment, the techniques may be realized as a method for biasing...
US-8,964,448 Memory cells having a plurality of resistance variable materials
Resistance variable memory cells having a plurality of resistance variable materials and methods of operating and forming the same are described herein. As an...
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