Easy To Use Patents Search & Patent Lawyer Directory
At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.
Searching: micron
Search by keyword, patent number, inventor, assignee, city or state:
| Patent # | Description |
|---|---|
| US-8,289,806 |
Multiple device apparatus, systems, and methods Apparatus, systems, and methods are disclosed that operate to generate a clock signal in a die in a stack and to receive the clock signal in another die in the... |
| US-8,289,799 |
Power source and power source control circuit Power sources, backup power circuits, power source control circuits, data storage devices, and methods relating to controlling application of power to a node... |
| US-8,289,796 |
Sense amplifier having loop gain control Memories, sense amplifiers, and methods for amplifying a current input are disclosed, including a sense amplifier including a bias circuit configured to provide... |
| US-8,289,790 |
Memory repair systems and methods for a memory having redundant memory Memories, memory repair logic, and methods for repairing a memory having redundant memory are disclosed. One such memory includes programmable elements... |
| US-8,289,779 |
Memory cell sensing device equipped with a ramp voltage generator using a
digital-to-analog converter (DAC) and... The present disclosure includes methods, devices, and systems for sensing memory cells. One or more embodiments include providing an output of a first counter... |
| US-8,289,776 |
Expanded programming window for non-volatile multilevel memory cells Embodiments of the present disclosure provide methods, devices, modules, and systems for utilizing an expanded programming window for non-volatile multilevel... |
| US-8,289,772 |
Memory with correlated resistance Methods, systems, and devices include a system for sequentially writing to a data locations coupled to one another in series. The system includes a plurality of... |
| US-8,289,767 |
Providing a ready-busy signal from a non-volatile memory device to a
memory controller A common standard may be used for both dynamic random access memories and non-volatile memories, despite the fact that the non-volatile memory generally needs... |
| US-8,289,763 |
Memory arrays Some embodiments include memory arrays. The memory arrays can have global bitlines extending along a first horizontal direction, vertical local bitlines... |
| US-8,289,760 |
Multi-mode memory device and method having stacked memory dice, a logic
die and a command processing circuit... Memory device systems, systems and methods are disclosed, such as those involving a plurality of stacked memory device dice and a logic die connected to each... |
| US-8,289,428 |
Method, apparatus and system providing imager vertical binning and scaling
using column parallel sigma-delta... A method, apparatus and system are disclosed for digitizing a plurality of analog pixel signals of a pixel array in a manner which produces a digital signal... |
| US-8,289,062 |
Analog delay lines and adaptive biasing Examples of analog delay lines and analog delay systems, such as DLLs incorporating analog delay lines are described, as are circuits and methods for adaptive... |
| US-8,289,059 |
Circuits and methods for clock signal duty-cycle correction Duty-cycle correction circuits, clock distribution networks, and methods for correcting duty-cycle distortion are disclosed, including methods and apparatus for... |
| US-8,289,050 |
Switching circuits, latches and methods Switching circuits, latches and methods are provided, such as those that may respond to an input signal that transitions from a first binary level to a second... |
| US-8,288,874 |
Stackable semiconductor assemblies and methods of manufacturing such
assemblies Stacked semiconductor devices and assemblies including attached lead frames are disclosed herein. One embodiment of a method of manufacturing a semiconductor... |
| US-8,288,867 |
Semiconductor constructions Some embodiments include semiconductor processing methods in which a copper barrier is formed to be laterally offset from a copper component, and in which... |
| US-8,288,859 |
Semiconductor device packages including a semiconductor device and a
redistribution element A method for fabricating a chip-scale board-on-chip substrate, or redistribution element, includes forming conductive planes on opposite sides of a substrate. A... |
| US-8,288,832 |
Semiconductor devices including a layer of polycrystalline silicon having
a smooth morphology A method for controlling the morphology of deposited silicon on a layer of silicon dioxide and semiconductor devices incorporating such deposited silicon are... |
| US-8,288,818 |
Devices with nanocrystals and methods of formation Devices can be fabricated using a method of growing nanoscale structures on a semiconductor substrate. According to various embodiments, nucleation sites are... |
| US-8,288,817 |
Semiconductor constructions for transistor gates and NAND cell units Some embodiments include methods of forming charge storage transistor gates and standard FET gates in which common processing is utilized for fabrication of at... |
| US-8,288,811 |
Fortification of charge-storing material in high-K dielectric environments
and resulting apparatuses Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel... |
| US-8,288,809 |
Zirconium-doped tantalum oxide films Dielectric layers containing a zirconium-doped tantalum oxide layer, where the zirconium-doped tantalum oxide layer is formed of one or more monolayers of... |
| US-8,288,795 |
Thyristor based memory cells, devices and systems including the same and
methods for forming the same Semiconductor devices including a plurality of thyristor-based memory cells, each having a cell size of 4F.sup.2, and methods for forming the same are provided.... |
| US-8,288,264 |
Scalable multi-function and multi-level nano-crystal non-volatile memory
device A multi-functional and multi-level memory cell comprises a tunnel layer formed over a substrate. In one embodiment, the tunnel layer comprises two layers such... |
| US-8,288,213 |
Methods of forming memory arrays Some embodiments include methods of forming memory arrays. A stack of semiconductor material plates may be patterned to subdivide the plates into pieces.... |
| US-8,288,083 |
Methods of forming patterned masks Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed... |
| US-8,286,883 |
System and method for updating read-only memory in smart card memory
modules A storage device contains a smart-card device and a memory device, both connected to a controller. The storage device may be used in the same manner as a... |
| US-8,286,066 |
Non-volatile memory with bi-directional error correction protection Embodiments of the present disclosure provide methods and apparatuses related to NVM devices with bi-directional error correction protection. In some... |
| US-8,285,976 |
Method and apparatus for predicting branches using a meta predictor A branch predicting apparatus is disclosed that reduces branch mispredictions in a processor. The branch prediction apparatus includes a base misprediction... |
| US-8,284,623 |
Electronic device comprising non volatile memory cells and corresponding
programming method A device with non volatile memory cells, with optimized programming, of the type comprising a sector of matrix memory cells organized in rows and columns, with... |
| US-8,284,617 |
Circuits, devices, systems, and methods of operation for capturing data
signals Embodiments of the invention describe driving data onto a bus. The embodiments include a data driver circuit having a data capture circuit coupled to the bus.... |
| US-8,284,616 |
Trench memory structure operation Memory cells utilizing dielectric charge carrier trapping sites formed in trenches provide for non-volatile storage of data. The memory cells of the various... |
| US-8,284,613 |
Semiconductor memory device having bit line pre-charge unit separated from
data register A semiconductor memory device is described that can, in certain embodiments, reduce a delay in access time and/or an area of a memory cell array. In one or more... |
| US-8,283,961 |
Delay line circuit Delay circuitry is described that includes clock mixing circuitry to provide a selectable propagation time. Output signals from the mixing circuitry are... |
| US-8,283,950 |
Delay lines, amplifier systems, transconductance compensating systems and
methods of compensating Embodiments of delay lines may include a plurality of delay stages coupled to each other in series from a first stage to a last stage. Each delay stage may... |
| US-8,283,946 |
Signaling systems, preamplifiers, memory devices and methods Signaling systems, preamplifiers, memory devices and methods are disclosed, such as a signaling system that includes a transmitter configured to receive a first... |
| US-8,283,785 |
Interconnect regions Some embodiments include interconnect regions. The regions may contain, along a cross section, a closed-shape interior region having an electrically conductive... |
| US-8,283,761 |
Packaged microelectronic devices and methods for manufacturing packaged
microelectronic devices Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a packaged... |
| US-8,283,744 |
Molybdenum-doped indium oxide structures and methods Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain indium and monolayers that contain... |
| US-8,283,710 |
Low dark current image sensors with epitaxial SiC and/or carbonated
channels for array transistors A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or... |
| US-8,283,708 |
Semiconductor devices and methods of forming semiconductor devices having
diffusion regions of reduced width Semiconductor devices and methods for forming semiconductor devices are provided, including semiconductor devices that comprise one or more diffusion region in... |
| US-8,283,648 |
Resistance variable memory cell Methods, devices, and systems associated with phase change memory structures are described herein. One or more embodiments of the present disclosure can reduce... |
| US-8,283,503 |
Methods of forming a tellurium alkoxide and methods of forming a mixed
halide-alkoxide of tellurium A method of forming a tellurium alkoxide includes providing a tellurium halide and a non-tellurium alkoxide in a liquid organic solvent. The liquid organic... |
| US-8,283,259 |
Methods of removing a metal nitride material A method of removing a metal nitride material is disclosed. The method comprises forming a semiconductor device structure comprising an exposed metal material... |
| US-8,283,258 |
Selective wet etching of hafnium aluminum oxide films Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlO.sub.x) material relative to silicon oxide (SiO.sub.x) are... |
| US-8,283,257 |
Systems and methods for oscillating exposure of a semiconductor workpiece
to multiple chemistries Systems and methods for oscillating exposure of a semiconductor workpiece to multiple chemistries are disclosed. A method in accordance with one embodiment... |
| US-8,283,236 |
Methods of forming capacitors Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of... |
| US-8,283,203 |
Methods utilizing microwave radiation during formation of semiconductor
constructions Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during... |
| US-8,283,198 |
Resistive memory and methods of processing resistive memory Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include forming... |
| US-8,283,112 |
Photoresist processing methods A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with... |
File A Patent Application
- Protect your idea -- Don't let someone else file first. Learn more.
- 3 Easy Steps -- Complete Form, application Review, and File. See our process.
- Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.