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Patent # Description
US-8,194,446 Methods for programming a memory device and memory devices using inhibit voltages that are less than a supply...
Methods for programming a memory array and memory devices are disclosed. In one such method, inhibited bit lines are charged to an inhibit voltage that is less...
US-8,194,441 Phase change memory state determination using threshold edge detection
Subject matter disclosed herein relates to techniques to read a memory cell that involve a threshold edge phenomenon of a reset state of phase change memory.
US-8,193,849 Generating a full rail signal
Apparatus, systems, and methods are disclosed, such as those that comprise a center-swing signal generator that includes a push-pull center-swing driver coupled...
US-8,193,646 Semiconductor component having through wire interconnect (TWI) with compressed wire
A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact....
US-8,193,607 Memory cell having GeN-containing material and variable resistance material embedded within insulating material
A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the...
US-8,193,590 Interconnecting bit lines in memory devices for multiplexing
An embodiment of a memory device has a plurality of conductive plugs formed on a semiconductor substrate and a pair of successively adjacent first and second...
US-8,193,568 Nanocrystal based universal memory cells, and memory cells
Some embodiments include memory cells that contain a dynamic random access memory (DRAM) element and a nonvolatile memory (NVM) element. The DRAM element...
US-8,193,521 Resistive memory cell fabrication methods and devices
A phase change memory cell and methods of fabricating the same are presented. The memory cell includes a variable resistance region and a top and bottom...
US-8,193,092 Semiconductor devices including a through-substrate conductive member with an exposed end and methods of...
Semiconductor devices and methods of manufacturing semiconductor devices. One example of a method of fabricating a semiconductor device comprises forming a...
US-8,192,903 Photomasks
Some embodiments include methods of forming photomasks. A stack of at least three different materials is formed over a base. Regions of the stack are removed to...
US-8,192,555 Non-chemical, non-optical edge bead removal process
A method for removing the edge bead from a substrate by applying an impinging stream of a medium that is not a solvent for the material to be removed. The...
US-8,192,257 Method of manufacture of constant groove depth pads
Processing pads for mechanical and/or chemical-mechanical planarization or polishing of substrates in the fabrication of microelectronic devices, methods for...
US-8,191,159 Data security for digital data storage
A computing system includes data encryption in the data path between a data source and data storage devices. The data storage devices may be local or they may...
US-8,190,849 Sharing physical memory locations in memory devices
A memory structure includes a plurality of address banks where each address bank is operative to store a memory address. In certain embodiments, at least two of...
US-8,190,819 System and method for optimizing interconnections of memory devices in a multichip module
An apparatus and method couples memory devices in a memory module to a memory hub on the module such that signals traveling from the hub to the devices have the...
US-8,189,450 Method and apparatus providing high density chalcogenide-based data storage
A data storage device and methods for storing and reading data are provided. The data storage device includes a data storage medium and second device. The data...
US-8,189,420 Advanced detection of memory device removal, and methods, devices and connectors
Memory devices, connectors and methods for terminating an operation are provided, including a memory device configured to terminate an internal operation such...
US-8,189,414 Maintenance of amplified signals using high-voltage-threshold transistors
Systems, apparatus, memory devices, sense amplifiers and methods are provided, such as a system that includes an input node, a first transistor having a gate...
US-8,189,387 Flash memory with multi-bit read
A memory device is described that comprises determining which read data state of more than 2.sup.X read data states a memory cell is in after the memory cell...
US-8,189,382 Read method for MLC
Memory devices adapted to process and generate analog data signals representative of data values of two or more bits of information facilitate increases in data...
US-8,189,376 Integrated circuit having memory cells including gate material having high work function, and method of...
An integrated circuit device (e.g., a logic or memory device) having a memory section including a plurality of memory cells, wherein each memory cell thereof...
US-8,189,375 Methods of forming memory cells and methods of forming programmed memory cells
In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel...
US-8,189,366 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
The invention relates to a method and apparatus providing a memory cell array in which each resistance memory cell is connected in series to a capacitive...
US-8,188,533 Write once read only memory employing charge trapping in insulators
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a...
US-8,188,464 Atomic layer deposition systems and methods including metal beta-diketiminate compounds
The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one .beta.-diketiminate ligand. Such...
US-8,187,983 Methods for fabricating semiconductor components using thinning and back side laser processing
A method for fabricating semiconductor components includes the steps of providing a semiconductor substrate having a circuit side, a back side and integrated...
US-8,187,934 Reverse construction memory cell
A method of fabricating a memory cell comprises forming a plurality of doped semiconductor layers on a carrier substrate. The method further comprises forming a...
US-8,187,933 Methods of forming dielectric material-containing structures
Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may...
US-8,187,901 Epitaxial formation support structures and associated methods
Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are...
US-8,187,487 Material removal methods employing solutions with reversible ETCH selectivities
A method for removing (e.g., etching) different dielectric materials from a semiconductor substrate includes exposing the semiconductor substrate to a solution...
US-8,184,492 Tri-state driver circuits having automatic high-impedance enabling
Memories, driver circuits, and methods for generating an output signal in response to an input signal. One such driver circuit includes an input stage and an...
US-8,184,489 Level shifting circuit
A level shifting circuit having an input and an output where the level shifting circuit is configured to receive a logical high level having a first voltage...
US-8,184,487 Modified read operation for non-volatile memory
A method may comprise executing a read operation to access a memory array by performing a preactive command to include a row-address-write operation and a...
US-8,184,481 Memory devices and methods of their operation including selective compaction verify operations
Memory devices and methods of their operation, where following an erasure of a string of memory cells, a selective compaction verify operation is performed on...
US-8,184,469 Stored multi-bit data characterized by multiple-dimensional memory states
A method for enhancing data storage may comprise storing two or more bits in a memory cell, wherein the stored bits may be characterized by two or more...
US-8,184,264 Calibration methods and devices useful in semiconductor photolithography
Several embodiments of photolithography devices and associated methods of focal calibration are disclosed herein. In one embodiment, a method for determining a...
US-8,184,188 Methods and apparatus for high dynamic operation of a pixel cell
A pixel circuit providing high dynamic operation, and methods of operating the pixel circuit providing for high dynamic operation. Methods include a lateral...
US-8,183,901 Delay locked loop circuit and method
Delay locked loop circuits and methods are disclosed. In the embodiments, a delay locked loop may include a phase detector to detect a phase difference between...
US-8,183,880 Devices and methods for driving a signal off an integrated circuit
Embodiments of the present invention provide electronic devices, memory devices and methods of driving an on-chip signal off a chip. In one such embodiment, an...
US-8,183,625 NROM flash memory devices on ultrathin silicon
An NROM flash memory cell is implemented in an ultra-thin silicon-on-insulator structure. In a planar device, the channel between the source/drain areas is...
US-8,183,615 Memory cell with a vertically oriented transistor coupled to a digit line and method of forming the same
A memory cell, array and device include an active area formed in a substrate with a vertical transistor including a first end disposed over a first portion of...
US-8,183,515 Pumps for CMOS imagers
A pixel for an imaging device is described. The pixel includes a photosensitive device provided within a substrate for providing photo-generated charges, a...
US-8,183,157 Method of forming capacitors, and methods of utilizing silicon dioxide-containing masking structures
Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of...
US-8,183,154 Selective metal deposition over dielectric layers
Selective deposition of metal over dielectric layers in a manner that minimizes or eliminates keyhole formation is provided. According to one embodiment, a...
US-8,183,151 Methods of forming conductive vias through substrates, and structures and assemblies resulting therefrom
Methods of forming conductive elements on and in a substrate include forming a layer of conductive material over a surface of a substrate prior to forming a...
US-8,183,138 Methods for forming nanodots and/or a patterned material during the formation of a semiconductor device
Methods for forming nanodots and/or a patterned material are provided. One such method involves forming a first patterning material over a base. Blades of a...
US-8,183,110 Memory cells, methods of forming dielectric materials, and methods of forming memory cells
Some embodiments include memory cells. The memory cells may include a tunnel dielectric material, a charge-retaining region over the tunnel dielectric material,...
US-8,183,085 High rate selective polymer growth on a substrate
Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth...
US-D660,349 Printer
US-8,181,086 Memory array error correction apparatus, systems, and methods
Various embodiments include apparatus, methods, and systems that operate to extend the processes of reading, modifying, and writing data stored in or being...
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