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Patent # Description
US-8,103,805 Configuration finalization on first valid NAND command
A startup method and circuit to allow high current consumption for startup processes of a low operating voltage memory device such as a NAND device until the...
US-8,102,906 Fractional-rate decision feedback equalization useful in a data transmission system
Decision feedback equalization (DFE) circuits are disclosed for use with fractional-rate clocks of lesser frequency than the data signal. For example, a...
US-8,102,723 Memory device bit line sensing system and method that compensates for bit line resistance variations
Systems, devices and methods are disclosed, such as a system and method of sensing the voltage on bit lines that, when respective memory cells coupled to the...
US-8,102,715 Power-off apparatus, systems, and methods
Apparatus, methods, and systems are disclosed, including those that are to prevent a bias voltage from rising to a higher level than a storage node voltage as...
US-8,102,710 System and method for setting access and modification for synchronous serial interface NAND
The invention includes a system and method of modifying a setting of a NAND flash memory device using serial peripheral interface (SPI) communication from a...
US-8,102,709 Transistor having peripheral channel
Transistors for use in semiconductor integrated circuit devices including a first source/drain region of the transistor is formed around a perimeter of a...
US-8,102,707 Non-volatile multilevel memory cells
The present disclosure includes methods, devices, modules, and systems for operating non-volatile multilevel memory cells. One method embodiment includes...
US-8,102,706 Programming a memory with varying bits per cell
Memory devices adapted to receive and transmit analog data signals representative of two or more bits, such as to facilitate increases in data transfer rates...
US-8,102,700 Unidirectional spin torque transfer magnetic memory cell structure
Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices...
US-8,102,410 Writing apparatuses and methods
Patterns are written on workpieces, such as, glass sheets and/or plastic sheets used in, for example, electronic display devices such as LCDs. The workpiece may...
US-8,102,295 Integrators for delta-sigma modulators
Methods, systems and devices are disclosed. Among the disclosed devices is an electronic device that, in certain embodiments, includes a plurality of memory...
US-8,102,013 Lanthanide doped TiO.sub.x films
The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiO.sub.X) doped with lanthanide elements, such as samarium,...
US-8,102,008 Integrated circuit with buried digit line
A method of forming a buried digit line is disclosed. Sacrificial spacers are formed along the sidewalls of an isolation trench, which is then filled with a...
US-8,102,006 Different gate oxides thicknesses for different transistors in an integrated circuit
An integrated circuit and gate oxide forming process are disclosed which provide a gate structure that is simple to integrate with conventional fabrication...
US-8,101,992 Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
A memory array with staggered local data/bit lines extending generally in a first direction formed in an upper surface of a substrate and memory cell access...
US-8,101,936 SnSe-based limited reprogrammable cell
Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and...
US-8,101,903 Method, apparatus and system providing holographic layer as micro-lens and color filter array in an imager
A method, apparatus, and system that provides a holographic layer as a micro-lens array and/or a color filter array in an imager. The method of writing the...
US-8,101,497 Self-aligned trench formation
Methods for forming a semiconductor device include forming self-aligned trenches, in which a first set of trenches is used to align a second set trenches....
US-8,101,464 Microelectronic devices and methods for manufacturing microelectronic devices
Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. One such method includes forming a plurality of apertures in...
US-8,101,459 Methods for assembling semiconductor devices in stacked arrangements by positioning spacers therebetween
A method for assembling semiconductor devices includes providing a first semiconductor device, securing spacers to noncircuit bond pads of the first...
US-8,101,454 Method of forming pixel cell having a grated interface
A pixel cell having a photosensor within a silicon substrate; and an oxide layer provided over the photosensor, the oxide layer having a grated interface with...
US-8,101,261 One-dimensional arrays of block copolymer cylinders and applications thereof
Methods for fabricating sublithographic, nanoscale microstructures in one-dimensional arrays utilizing self-assembling block copolymers, and films and devices...
US-8,099,543 Methods of operarting memory devices within a communication protocol standard timeout requirement
The present disclosure includes methods and devices for logical memory blocks. One method for operating a memory device includes receiving a command to operate...
US-8,099,366 Software distribution method and apparatus
The present invention provides for a method and apparatus for distributing digital information, such as software applications, to application users. By...
US-8,098,530 Systems and methods for erasing a memory
Methods of erasing a memory, methods of operating a memory, memory devices, and systems. In one such method, an erase block is erased to an intermediate erase...
US-8,098,529 Memory device having buried boosting plate and methods of operating the same
Memory devices are disclosed, such as those that include a semiconductor-on-insulator (SOI) NAND memory array having a boosting plate. The boosting plate may be...
US-8,098,180 Devices including analog-to-digital converters for internal data storage locations
A device that includes an internal data storage location coupled to an electrical conductor and an analog-to-digital converter coupled to the internal data...
US-8,097,947 Conductive systems and devices including wires coupled to anisotropic conductive film, and methods of forming...
Methods and apparatus for eliminating wire sweep and shorting while avoiding the use of under-bump metallization and high cost attendant to the use of...
US-8,097,910 Vertical transistors
The invention includes a semiconductor structure having U-shaped transistors formed by etching a semiconductor substrate. In an embodiment, the source/drain...
US-8,097,908 Antiblooming imaging apparatus, systems, and methods
Apparatus, systems, and methods are described to assist in reducing dark current in an active pixel sensor. In various embodiments, a potential barrier...
US-8,097,537 Phase change memory cell structures and methods
Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a...
US-8,097,506 Shallow trench isolation for a memory
In some embodiments, a gate structure with a spacer on its side may be used as a mask to form self-aligned trenches in a microelectronic memory, such as a flash...
US-8,097,175 Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures,...
Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for...
US-8,095,835 Error scanning in flash memory
Various embodiments include methods, apparatus, and systems to scan at least a portion of a memory device for potential errors when a condition for scanning is...
US-8,095,834 Macro and command execution from memory array
Methods and apparatus for executing internal operations of memory devices utilizing instructions stored in the memory array of the memory device are disclosed....
US-8,095,765 Memory block management
Various embodiments include one or more memory devices having at least two planes of physical blocks organized into super blocks, with each super block...
US-8,095,748 Method and apparatus for sending data from multiple sources over a communications bus
In a memory system, multiple memory modules communicate over a bus. Each memory module may include a hub and at least one memory storage unit. The hub receives...
US-8,094,984 Semiconductor constructions, methods of forming semiconductor constructions, light-conducting conduits, and...
The invention includes optical signal conduits having rare earth elements incorporated therein. The optical signal conduits can, for example, contain rare earth...
US-8,094,508 Memory block testing
A memory block of a memory device is tested by programming a plurality of pages of the memory block, passing the memory block if a number of pages, each...
US-8,094,507 Command latency systems and methods
Examples of command latency systems and methods are described. In some examples, phase information associated with a received command signal is stored, a...
US-8,094,047 Data serializer apparatus and methods
Some embodiments include apparatus and methods having an output line, clock nodes to receive clock signals, the clock signals being out of phase with each...
US-8,094,045 Data bus inversion apparatus, systems, and methods
Apparatus, systems, and methods are disclosed such as those that operate to encode data bits transmitted on a plurality of channels according to at least one of...
US-8,093,937 Seamless coarse and fine delay structure for high performance DLL
A clock synchronization system and method avoids output clock jitter at high frequencies and also achieves a smooth phase transition at a boundary of coarse and...
US-8,093,730 Underfilled semiconductor die assemblies and methods of forming the same
An apparatus and method may be used for packaging a semiconductor die and a carrier substrate to substantially prevent trapped moisture therebetween and provide...
US-8,093,725 High aspect ratio contacts
A contact formed in accordance with a process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by first exposing the...
US-8,093,702 Stacked microelectronic devices and methods for manufacturing stacked microelectronic devices
Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing...
US-8,093,666 Lanthanide yttrium aluminum oxide dielectric films
Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a...
US-8,093,658 Electronic device with asymmetric gate strain
The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced...
US-8,093,643 Multi-resistive integrated circuit memory
A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a...
US-8,093,638 Systems with a gate dielectric having multiple lanthanide oxide layers
Electronic systems and methods of forming the electronic systems include a gate dielectric having multiple lanthanide oxide layers. Such electronic systems may...
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